dc.contributor.author | Drobiazg, Tomasz | |
dc.contributor.author | Arzel, Ludovic | |
dc.contributor.author | Donmez, Adem | |
dc.contributor.author | Zabierowski, Pawel | |
dc.contributor.author | Barreau, Nicolas | |
dc.date.accessioned | 2020-11-20T15:05:58Z | |
dc.date.available | 2020-11-20T15:05:58Z | |
dc.date.issued | 2015 | |
dc.identifier.issn | 0040-6090 | |
dc.identifier.uri | https://doi.org/10.1016/j.tsf.2014.09.069 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12809/3080 | |
dc.description | Symposium A on Thin Film Chalcogenide Photovoltaic Materials held at the E-MRS Spring Meeting - MAY 26-30, 2014 - Lille, FRANCE | en_US |
dc.description | Barreau, Nicolas/0000-0002-8423-153X; Zabierowski, Pawel/0000-0001-5277-8285 | en_US |
dc.description | WOS: 000352225900012 | en_US |
dc.description.abstract | In the laboratory scale, cells based on Cu(In, Ga)Se-2 grown by the 3-stage process reach the best performance because of high open-circuit voltage and short-circuit current (V-OC-J(SC)) combination. One of the reasons for that could be the V-shaped gradient of Ga to In atomic ratio throughout the Cu(In, Ga)Se-2 layer, which results from large differences in the diffusion coefficients of In and Ga. The location of the lowest Ga-content in the Cu(In, Ga)Se-2 (i. e. Ga notch), also corresponds to the Cu-poor to Cu-rich transition during the 2nd stage. Since this transition is associated to a phenomenon of recrystallisation, the arising question is whether high V-OC-J(SC) combination is effectively inherent to V-shaped gradient or to recrystallisation. In our work we attempt to eliminate the influence of recrystallisation to exclusively study the influence of Ga/In gradients. Our approach was to co-evaporate samples by the one-step process with different gradients by the continuous modification of In and Ga fluxes during the deposition and keeping constant that of Cu in a way that its ratio to group III elements was 0.9. With this method, we could obtain a set of Cu(In, Ga)Se-2 layers either free of gradient, with linear gradient (i. e. no notch) or V-shaped gradient with notch at a different distance from the Cu(In, Ga)Se-2 surface. We observe that depending on the presence of notch in conduction band or the position of notch it is possible to modify the impact of secondary barriers on current-voltage characteristics. (C) 2014 Elsevier B. V. All rights reserved. | en_US |
dc.description.sponsorship | European Mat Res Soc | en_US |
dc.description.sponsorship | Centre for Advanced Studies at Warsaw University of Technology; National Centre for Research and Development [MNT/CONSEPT/2012] | en_US |
dc.description.sponsorship | The first author thanks for the financial support received from the Centre for Advanced Studies at Warsaw University of Technology through the "Warsaw University of Technology Development Programme" in the framework of European Social Fund, In Poland this work has been sponsored by the National Centre for Research and Development under the contract MNT/CONSEPT/2012. | en_US |
dc.item-language.iso | eng | en_US |
dc.publisher | Elsevier Science Sa | en_US |
dc.item-rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | Cu(In, Ga)Se-2 | en_US |
dc.subject | Cigse | en_US |
dc.subject | Recrystallisation | en_US |
dc.subject | Indium Gradient | en_US |
dc.subject | Gallium Gradient | en_US |
dc.subject | Notch Position | en_US |
dc.subject | Secondary Barriers | en_US |
dc.subject | Electrical Characterisation | en_US |
dc.title | Influence of indium/gallium gradients on the Cu(In, Ga)Se-2 devices deposited by the co-evaporation without recrystallisation | en_US |
dc.item-type | conferenceObject | en_US |
dc.contributor.department | MÜ | en_US |
dc.contributor.departmentTemp | [Drobiazg, Tomasz; Zabierowski, Pawel] Warsaw Univ Technol, Fac Phys, PL-00662 Warsaw, Poland -- [Drobiazg, Tomasz; Arzel, Ludovic; Barreau, Nicolas] Univ Nantes, Inst Mat Jean Rouxel IMN, CNRS UMR 6502, F-44322 Nantes 3, France -- [Donmez, Adem] Mugla Sitki Kocman Univ, Dept Phys, Fac Sci, TR-48000 Mugla, Turkey | en_US |
dc.identifier.doi | 10.1016/j.tsf.2014.09.069 | |
dc.identifier.volume | 582 | en_US |
dc.identifier.startpage | 47 | en_US |
dc.identifier.endpage | 50 | en_US |
dc.relation.journal | Thin Solid Films | en_US |
dc.relation.publicationcategory | Konferans Öğesi - Uluslararası - Kurum Öğretim Elemanı | en_US |