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dc.contributor.authorTuran, Elif
dc.contributor.authorYılmaz, Gökhan
dc.contributor.authorSmirnov, Vladimir
dc.contributor.authorFinger, Friedhelm
dc.contributor.authorGüneş, Mehmet
dc.date.accessioned2020-11-20T16:21:57Z
dc.date.available2020-11-20T16:21:57Z
dc.date.issued2012
dc.identifier.issn0021-4922
dc.identifier.issn1347-4065
dc.identifier.urihttps://doi.org/10.1143/JJAP.51.070210
dc.identifier.urihttps://hdl.handle.net/20.500.12809/4095
dc.descriptionWOS: 000306190500010en_US
dc.description.abstractMetastability effects in amorphous and microcrystalline silicon thin films induced by exposure to atmospheric gases and water are investigated. A simple procedure is described which allows studying such effects in a reproducible and reliable manner on a short time scale. The method is applied to thin film silicon materials with different structure composition ranging from amorphous to highly crystalline. It is shown that the materials can be brought back into a well defined state even after pro-longed and repeated degradation cycles. (C) 2012 The Japan Society of Applied Physicsen_US
dc.description.sponsorshipTUBITAK of TurkeyTurkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [108T218]; BMBF of GermanyFederal Ministry of Education & Research (BMBF) [TUR 08/003]; HGF-TUBITAK fellowship programTurkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [IK-TR-07, IK-TR-08]en_US
dc.description.sponsorshipWe thank T. Chen and M. Hulsbeck for their contributions to this work and U. Rau for continuous support and encouragement. Financial support from TUBITAK of Turkey (project number 108T218), the BMBF of Germany (project number TUR 08/003) and a HGF-TUBITAK fellowship program (project numbers IK-TR-07 and IK-TR-08) is gratefully acknowledged.en_US
dc.item-language.isoengen_US
dc.publisherIop Publishing Ltden_US
dc.item-rightsinfo:eu-repo/semantics/openAccessen_US
dc.titleRapid Reversible Degradation of Silicon Thin Films by a Treatment in Wateren_US
dc.item-typearticleen_US
dc.contributor.departmentMÜ, Fen Fakültesi, Fizik Bölümüen_US
dc.contributor.institutionauthorTuran, Elif
dc.contributor.institutionauthorYılmaz, Gökhan
dc.identifier.doi10.1143/JJAP.51.070210
dc.identifier.volume51en_US
dc.identifier.issue7en_US
dc.relation.journalJapanese Journal of Applied Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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