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dc.contributor.authorBayhan, Habibe
dc.contributor.authorKavasoğlu, Abdulkadir Sertap
dc.date.accessioned2020-11-20T16:47:10Z
dc.date.available2020-11-20T16:47:10Z
dc.date.issued2007
dc.identifier.issn1300-0101
dc.identifier.urihttps://hdl.handle.net/20.500.12809/5830
dc.description.abstractThe paper presents a new analytical method for extracting the diode ideality factor of a p-n junction device using Lambert W-function model and the dark current-voltage data. The extracted values are found to be in good agreement with those calculated experimentally from dark current-voltage characteristics. © TÜBİTAK.en_US
dc.item-language.isoengen_US
dc.item-rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectIdeality factoren_US
dc.subjectLambert W-functionen_US
dc.subjectSolar cellen_US
dc.titleExact analytical solution of the diode ideality factor of a pn junction device using Lambert W-function modelen_US
dc.item-typearticleen_US
dc.contributor.departmentMÜ, Fen Fakültesi, Fizik Bölümüen_US
dc.contributor.institutionauthorBayhan, Habibe
dc.contributor.institutionauthorKavasoğlu, Abdulkadir Sertap
dc.identifier.volume31en_US
dc.identifier.issue1en_US
dc.identifier.startpage7en_US
dc.identifier.endpage10en_US
dc.relation.journalTurkish Journal of Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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