Electrical measurements of Hg1 - xMnxTe films grown by metalorganic vapour phase epitaxy
Özet
Preliminary electrical measurements of mercury manganese telluride (MMT) films, grown by metalorganic vapour phase epitaxy (MOVPE), are reported. The epitaxial films were grown on insulating (100)GaAs substrates with a buffer layer of ZnTe and CdTe by the interdiffused multilayer process (IMP). Electrical transport measurements were made on samples of x = 0.05-0.08 and x = 0.08-0.11, at magnetic fields of up to 0.38 T, and for the temperature range of 20-300 K. It is demonstrated that both n- and p-type epilayers may be produced depending upon growth conditions, with extrinsic electron and hole concentrations of order 1015 and 1014 cm-3, respectively.
