Browsing Fizik Bölümü Koleksiyonu by Issue Date
Now showing items 1-20 of 189
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Electrical measurements of Hg1 - xMnxTe films grown by metalorganic vapour phase epitaxy
(Elsevier, 1996)Preliminary electrical measurements of mercury manganese telluride (MMT) films, grown by metalorganic vapour phase epitaxy (MOVPE), are reported. The epitaxial films were grown on insulating (100)GaAs substrates with a ... -
Properties of ZnO layers deposited by ''photo-assisted'' spray pyrolysis
(Elsevier Science Bv, 1996)Layers of ZnO have been deposited onto glass substrates by ''photo-assisted'' spray pyrolysis using zinc chloride and zinc acetate as precursors in aqueous and non-aqueous solutions. The structure of these films has been ... -
Magnetic measurements on HgMnTe epitaxial layers
(Amer Inst Physics, 1997)Magnetization measurements have been performed on epitaxial layers of Hg1−xMnxTe (MMT) using an alternating gradient field magnetometer (AGFM). The layers, which have a Mn concentration in the range 0.05<x<0.20, and ... -
Structural and Optical Characterisation of Vacuum Deposited CdTe Thin Films
(1998)The structural and optical properties of vacuum deposited CdTe thin films on glass substrates were investigated. The effect of the heat treatment in air over the former properties of the layers was also examined. Grain ... -
Real gamma scattering at TESLA x N collider
(2001)The proposal for measurement of polarized gluon and quark distributions in scattering of polarized real y beam on polarized nuclear target have been considered. High energy y beam is obtained by backscattering of laser ... -
n -CdS/ p-Cu (In, Ga)Se2 heteroeklem güneş pilinde akım iletim mekanizmasının belirlenmesi
(2001)Bu çalışmada Stuttgart Üniversitesi IPE laboratuarlarında hazırlanan ve emici tabakasını oluşturan materyallerin göreli ağırlık oranları; %22.26 Cu, %19.46 In,"%7.27 Ga ve %51.02 Se olan n-CdS/p-Cu(In,Ga)Se2 heteroeklem ... -
Reflective light modulator based on epsilon-GaSe crystal
(Optical Soc Amer, 2002)We report the results of investigating a low-voltage, polarization-insensitive, reflective-type modulator based on an epsilon -GaSe crystal and operated at the 1.960-eV line of a He-Ne laser. We demonstrate that the ... -
Interdependence of absorber composition and recombination mechanism in Cu(In,Ga)(Se,S)(2) heterojunction solar cells
(Amer Inst Physics, 2002)Temperature-dependent current-voltage measurements are used to determine the dominant recombination path in thin-film heterojunction solar cells based on a variety of Cu(In,Ga)(Se,S)(2) alloys. The activation energy of ... -
Searching for Color Octet Leptons in Lepton-Hadron Collisions
(2003)We study the resonance production of color octet leptons ${l_8}$ predicted by composite preon models of leptons and quarks at lepton-hadron colliders such as TESLA x HERA,$\mu p$ and Linac-LHC with the energy of about 1-10 ... -
Admittance and impedance spectroscopy on Cu(In,Ga)Se2 solar cells
(2003)The present work reports some experimental results on the electrical properties of high efficiency ZnO/CdS/Cu(In,Ga)Se2 heterojunction solar cells. Admittance spectroscopy has been employed for characterisation of the bulk ... -
Raman scattering under pressure and the phase transition in epsilon-GaSe
(Wiley-V C H Verlag Gmbh, 2003)Raman scattering in epsilon-GaSe has been investigated at room temperature in a diamond anvil cell by using helium gas as a pressure transmitting medium. The first observation of the solid-solid phase transition under ... -
Raman scattering in layered CdInGaS4
(2004)Raman scattering spectra of CdInGaS4 crystals grown by the chemical transport method were measured at room and liquid-nitrogen temperatures. Band pairs at 29-38, 43-48 and 60-65 $cm^{-1}$ are reported for the first time. ... -
Effects of supersymmetric CP phases on chargino-pair production via the Drell-Yan process at the CERN LHC
(Amer Physical Soc, 2004)We compute the rates for pp annihilation into chargino pairs via the Drell-Yan process taking into account the effects of supersymmetric soft phases, at a proton-proton collider. In particular, the phase of the mu parameter ... -
Air moisture sensing properties of ZnCr2O4−K2CrO4 composites
(2005)Crystalline structure, surface morphology and the response to air moisture of ceramic system of composition $ZnCr_2O_4-K_2CrO_4$ formed by solid state reaction at elevated temperatures were investigated. The fired ceramic ... -
Determination of defect distribution in a Ga-rich ZnO/CdS/Cu (In, Ga) $Se_2$ solar cell by admittance spectroscopy
(2005)This article presents a study on the energy distribution of defects in efficient thin film ZnO/CdS/Cu(In,Ga)$Se_2$ heterojunction solar cell by the use of admittance spectroscopy. The capacitance spectra of the device has ... -
$ZnCr_2O_4$'in nem algılama davranışlarının $K_2CrO_4$ eklenerek geliştirilmesi
(2005)Spinel $ZnCr_2O_4$ seramiğine çeşitli yüzdesel oranlarda potasyum kromatla yapılan katkılandırmanın neme karşı davranışı ile ilgili etkileri çalışılmıştır. Numuneler arasında sadece %20 $K_2CrO_4$ içeren $ZnCr_2O_4$ seramik ... -
Tunnelling enhanced recombination in polycrystalline CdS/CdTe and CdS/Cu(In,Ga)Se-2 heterojunction solar cells
(Pergamon-Elsevier Science Ltd, 2005)This article investigates the results of current-voltage measurements made at different temperatures on vacuum deposited ZnO/CdS/Cu(In,Ga)Se-2 and CdS/CdTe heterojunction solar cells. We propose that the current-voltage ... -
Corrected infrared Sellmeier coefficients for gallium selenide
(Amer Inst Physics, 2005)We have measured the room-temperature refractive indices of GaSe throughout the 0.7-1.4 and 2.4-5 mu m ranges using the minimum-deviation method of light through a prism with polarization either parallel (extraordinary ... -
Origins of Reverse Bias Currents in a Typical BPW34 Photodiode
(Scientific Technical Research Council Turkey-Tubitak, 2005)Measurements of the dark reverse current in a typical BPW34 silicon photodiode have been made in the temperature range 100-300 K at various reverse bias voltages ranging from 0 to 60 V. Various transport models have been ... -
Forward and reverse current-voltage-temperature characteristics of a typical BPW34 photodiode
(Pergamon-Elsevier Science Ltd, 2006)The dark forward and reverse current-voltage characteristics of a typical BPW34 silicon photodiode have been investigated in the temperature range 80-300 K. We propose that tunnelling enhanced recombination at or close to ...
